02
Power
Semiconductor
| Group Leader: | Tsubasa Matsumoto, Ph.D. Associate Professor |
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Driving energy-saving innovation through the development of the ultimate material
Beyond Silicon, SiC, and GaN: The Power of Diamond Silicon (Si) power semiconductors have long been the backbone of global energy efficiency. However, the next era demands a paradigm shift in performance. While wide-bandgap materials like SiC, GaN, and Gallium Oxide are emerging, Diamond remains the ultimate material. Its breakdown voltage and thermal conductivity far surpass even SiC and GaN, making it the definitive key to high-efficiency, low-loss power devices for next-generation power grids, electric vehicles (EVs), and the aerospace industry.
Our group is dedicated to unlocking the full potential of synthetic diamond. We are developing proprietary power device architectures capable of high-voltage and high-current switching. Our expertise extends beyond device fabrication to the fundamental control of defects and the establishment of termination technologies—factors that determine device stability and performance. This holistic approach, from basic materials science to novel device structures, is our greatest strength in exploring frontiers unreachable by conventional materials.
Specific Research Themes
We are developing high-voltage MOSFETs from both conventional and novel structural perspectives, targeting next-generation infrastructure, EVs, and space applications. Furthermore, to ensure stable operation from cryogenic to high temperatures, we are developing diodes that incorporate heavily doped thin films. Unlike traditional thin films that rely on temperature-sensitive band conduction, our approach utilizes hopping or metallic conduction, which exhibits minimal temperature dependency. By optimizing these device structures, we achieve both energy efficiency and high reliability across a broad temperature range.
Vision for a Sustainable Future
Utilizing our integrated research environment—spanning from thin-film growth to device evaluation—we aim to establish the power electronics technologies that will sustain a future society. Through diamond, the ultimate semiconductor, we are building the foundation for a sustainable and energy-efficient world.
Group Members
Associate Professor
Tsubasa MATSUMOTO
Visiting Professor
Satoshi YAMASAKI
Associate Professor
Shoya MATSUDA