Suppression of on-resistance variability by buried source/drain structures in inversion type diamond MOSFETs
Kai Sato, Tsubasa Yoshimoto, Kimiyoshi Ichikawa, Kan Hayashi, Hiromitsu Kato, Toshiharu Makino, Masahiko Ogura, Daisuke Takeuchi, Takao Inokuma, Satoshi Yamasaki, Norio Tokuda, Tsubasa Matsumoto,
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